ELECTRON TRANSPORT THROUGH MULTILEVEL QUANTUM DOT
نویسندگان
چکیده
منابع مشابه
Effect of asymmetric quantum dot rings in electron transport through a quantum wire
The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...
متن کاملEffect of asymmetric quantum dot rings in electron transport through a quantum wire
The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...
متن کاملeffect of asymmetric quantum dot rings in electron transport through a quantum wire
the electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting hamiltonian anderson tunneling method. in this paper we concentrate on the configuration of the quantum dot rings. we show that the asymmetric structure of qd-scatter system strongly influences the amplitude an...
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Abstract. A new approach in the quantum theory of few-electron nanoelectronic devices – the S-matrix approach – is presented in a simple example: a single-electron transistor consisting of a single-level quantum dot connected with two metallic leads through the corresponding potential barriers. The electron transport through the quantum dot due to the electron tunneling between the dot and the ...
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We consider the time-dependent electron transport through a quantum dot connected to multiple leads in the presence of the additional over-dot (bridge) tunnelling channels by using the evolution operator technique. Each terminal and quantum dot are disturbed by an external oscillating field resulting in a time-dependence of the corresponding energy levels. The final analytical expressions for t...
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ژورنال
عنوان ژورنال: International Journal of Nanoscience
سال: 2008
ISSN: 0219-581X,1793-5350
DOI: 10.1142/s0219581x08005122